IRL7833SPBF
MOSFET N-CH 30V 150A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL7833SPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 150 A at 25°C. The low on-resistance (Rds On) of 3.8 mOhm at 38 A and 10 V gate-source voltage ensures minimal conduction losses. With a maximum power dissipation of 140 W (Tc), it is suitable for demanding thermal environments. The device operates from a gate-source voltage range of up to ±20 V and a threshold voltage (Vgs(th)) of 2.3 V at 250 µA. Key parameters include input capacitance (Ciss) of 4170 pF at 15 V and gate charge (Qg) of 47 nC at 4.5 V, enabling fast switching performance. The IRL7833SPBF is packaged in a TO-263-3, D2PAK surface-mount configuration, commonly utilized in automotive, industrial, and power supply sectors. It is rated for operation across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4170 pF @ 15 V |
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