IRL7833PBF
MOSFET N-CH 30V 150A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRL7833PBF, is a high-performance power device designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 150A at 25°C. With a low on-resistance (Rds On) of 3.8mOhm at 38A and 10V, it minimizes conduction losses. The IRL7833PBF offers a maximum power dissipation of 140W (Tc) and operates efficiently across a wide temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 47 nC at 4.5V and input capacitance (Ciss) of 4170 pF at 15V. It is presented in a standard TO-220AB through-hole package. This MOSFET is commonly utilized in industrial automation, power supply units, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4170 pF @ 15 V |
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