IRL6342TRPBF
MOSFET N-CH 30V 9.9A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL6342TRPBF, is designed for demanding applications requiring efficient power switching. This device features a 30V drain-source voltage rating and a continuous drain current capability of 9.9A at 25°C (Ta), with a maximum power dissipation of 2.5W (Ta). The low on-resistance of 14.6mOhm at 9.9A and 4.5V gate drive makes it suitable for high-current switching. Key parameters include a gate charge of 11nC at 4.5V and input capacitance of 1025pF at 25V. The IRL6342TRPBF is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, supplied on tape and reel. This MOSFET is utilized across various industries, including automotive, industrial automation, and consumer electronics, for power management and control functions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 14.6mOhm @ 9.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1025 pF @ 25 V |
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