IRL60SC216ARMA1
MOSFET N-CH 60V 324A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the StrongIRFET™ IRL60SC216ARMA1, an N-Channel Power MOSFET designed for high-current applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 324A at 25°C (Tc). With a low on-resistance (Rds On) of 1.5mOhm at 100A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 218 nC at 4.5V and a maximum input capacitance (Ciss) of 16000 pF at 30V. It is housed in a PG-TO263-7 surface-mount package, offering significant power dissipation capabilities of 375W (Tc). Operating across an industrial temperature range of -55°C to 175°C, this MOSFET is suitable for demanding power management solutions in electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 324A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PG-TO263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 218 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 30 V |
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