IRL60S216
MOSFET N-CH 60V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ MOSFET, part number IRL60S216, is an N-Channel device designed for high-power applications. This component features a 60V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 195A at 25°C (Tc). The IRL60S216 offers a low on-resistance (Rds On) of 1.95mOhm at 100A and 10V, with a maximum power dissipation of 375W (Tc). It supports a gate drive voltage range from 4.5V to 10V, with a maximum gate charge (Qg) of 255 nC at 4.5V and a maximum input capacitance (Ciss) of 15330 pF at 25V. The device operates within an extended temperature range of -55°C to 175°C (TJ). Packaged in a PG-TO263-3 (D2PAK) surface-mount configuration, the IRL60S216 is suitable for demanding power management solutions in sectors such as industrial automation, electric vehicles, and renewable energy systems. This component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15330 pF @ 25 V |
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