IRL60B216
MOSFET N-CH 60V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRL60B216 is an N-Channel Power MOSFET from the StrongIRFET™ series, designed for high-current applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 195A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The low on-resistance (Rds On) of 1.9mOhm at 100A and 10V gate drive, coupled with a gate charge (Qg) of 258nC at 4.5V, ensures efficient switching performance. Operating across a wide temperature range of -55°C to 175°C (TJ), the IRL60B216 is housed in a standard TO-220AB package for through-hole mounting. Its robust characteristics make it suitable for demanding industrial automation, motor control, and power supply applications.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15570 pF @ 25 V |
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