IRL5602STRRPBF
MOSFET P-CH 20V 24A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRL5602STRRPBF, offers a 20V drain-source voltage and 24A continuous drain current at 25°C. This device features a low on-resistance of 42mOhm maximum at 12A and 4.5V gate-source voltage. The surface-mount D2PAK package (TO-263-3, D2PAK) is supplied on tape and reel. Key electrical characteristics include a 44nC maximum gate charge at 4.5V and 1460pF maximum input capacitance at 15V. With a maximum power dissipation of 75W at 25°C (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
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