IRL5602STRR
MOSFET P-CH 20V 24A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies HEXFET® IRL5602STRR is a P-Channel MOSFET designed for power switching applications. This device features a Drain-Source Voltage (Vds) of 20 V and a continuous Drain Current (Id) of 24 A at 25°C, with a maximum power dissipation of 75 W (Tc). The IRL5602STRR offers a low on-resistance of 42 mOhm at 12 A and 4.5 V, and a gate threshold voltage (Vgs(th)) of 1 V at 250 µA. Key electrical characteristics include input capacitance (Ciss) of 1460 pF (max) at 15 V and gate charge (Qg) of 44 nC at 4.5 V. It is packaged in a D2PAK (TO-263-3) for surface mounting and operates across a temperature range of -55°C to 175°C. This component is suitable for use in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
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