IRL5602SPBF
MOSFET P-CH 20V 24A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET IRL5602SPBF offers a 20V drain-source voltage and a continuous drain current of 24A at 25°C (Tc). This surface mount device, packaged in a D2PAK (TO-263-3, D2PAK), provides a maximum power dissipation of 75W (Tc). With a typical Rds(On) of 42mOhm at 12A and 4.5V Vgs, it is designed for efficient power switching applications. The gate charge (Qg) is 44 nC maximum at 4.5V Vgs, and input capacitance (Ciss) is 1460 pF maximum at 15V Vds. Operating temperature range is -55°C to 175°C. This component is suitable for use in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
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