IRL5602L
MOSFET P-CH 20V 24A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRL5602L, offers a 20V drain-source voltage and a continuous drain current of 24A at 25°C (Tc). This device features a low on-resistance of 42mOhm maximum at 12A and 4.5V Vgs. The gate charge is specified at 44nC maximum at 4.5V, with input capacitance (Ciss) at 1460pF maximum at 15V Vds. Designed with a P-Channel enhancement mode, it operates efficiently with gate-source voltages between 2.5V and 4.5V, and a maximum Vgs of ±8V. The IRL5602L utilizes TO-262-3 Long Leads packaging for through-hole mounting. This component is suitable for applications in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
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