IRL540NSPBF
MOSFET N-CH 100V 36A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL540NSPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 36A at 25°C (Tc). With a low on-resistance (Rds On) of 44mOhm maximum at 18A and 10V, it minimizes conduction losses. The device exhibits a gate charge of 74nC maximum at 5V and an input capacitance (Ciss) of 1800pF maximum at 25V.
Fabricated using advanced MOSFET technology, the IRL540NSPBF offers excellent thermal management capabilities, with a maximum power dissipation of 140W at 25°C (Tc) and 3.8W at 25°C (Ta). The operating temperature range is -55°C to 175°C (TJ). This component is housed in a TO-263-3, D2PAK surface-mount package, commonly found in power management, automotive, and industrial control systems. The gate-source voltage (Vgs) tolerance is ±16V, with a threshold voltage (Vgs(th)) maximum of 2V at 250µA.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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