IRL540NLPBF
MOSFET N-CH 100V 36A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRL540NLPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This through-hole component features a maximum drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 36 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 44 mOhm maximum at 18 A and 10 V gate-source voltage. Key electrical characteristics include a typical gate charge (Qg) of 74 nC at 5 V and input capacitance (Ciss) of 1800 pF at 25 V. With a maximum power dissipation of 3.8 W (Ta) and 140 W (Tc), the IRL540NLPBF is suitable for use in industrial and automotive power management systems. It is housed in a TO-262-3 Long Leads package.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
