IRL530NSTRRPBF
MOSFET N-CH 100V 17A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IRL530NSTRRPBF, a HEXFET® N-Channel Power MOSFET. This surface mount component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 17A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 100mOhm at 9A and 10V (Vgs), it offers efficient power handling. The device boasts a low gate charge (Qg) of 34 nC at 5V and an input capacitance (Ciss) of 800 pF at 25V. The IRL530NSTRRPBF is supplied in a D2PAK (TO-263-3) package, suitable for tape and reel mounting. It operates across a wide temperature range from -55°C to 175°C. Applications include power switching and motor control systems in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
