IRL530NSTRL
MOSFET N-CH 100V 17A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL530NSTRL, offers a 100V drain-source breakdown voltage and a continuous drain current of 17A at 25°C (Tc). This surface-mount device, housed in a D2PAK (TO-263-3) package, features a maximum on-resistance of 100mOhm at 9A and 10V. Key parameters include a gate charge (Qg) of 34 nC at 5V and input capacitance (Ciss) of 800 pF at 25V. The power dissipation is rated at 79W (Tc) and 3.8W (Ta). Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for applications in industrial and automotive sectors. The device is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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