IRL530NSPBF
MOSFET N-CH 100V 17A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRL530NSPBF is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 17A at 25°C (Tc). The device exhibits a maximum Rds(on) of 100mOhm at 9A, 10V, with a drive voltage range of 4V to 10V. Key parameters include a gate charge (Qg) of 34nC (max) at 5V and an input capacitance (Ciss) of 800pF (max) at 25V. With a power dissipation capability of 79W (Tc) and 3.8W (Ta), it is suitable for demanding thermal environments. The IRL530NSPBF is housed in a TO-263-3, D2PAK package for surface mounting and operates across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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