IRL530NPBF
MOSFET N-CH 100V 17A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET. This device features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 17 A at 25°C. The Rds(On) is specified at a maximum of 100 mOhm at 9 A, 10 V. Key parameters include a Gate Charge (Qg) of 34 nC at 5 V and an input capacitance (Ciss) of 800 pF at 25 V. The power dissipation is rated at 79 W (Tc). This through-hole component is housed in a TO-220AB package. It is suitable for applications in industrial and automotive sectors requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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