IRL530NL
MOSFET N-CH 100V 17A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL530NL is a 100V N-Channel power MOSFET in a TO-262 package. This device offers a continuous drain current of 17A at 25°C (Tc) and a low on-resistance of 100mOhm maximum at 9A, 10V. Key parameters include a gate charge of 34 nC maximum at 5V and an input capacitance of 800 pF maximum at 25V. The IRL530NL features a maximum power dissipation of 79W at 25°C (Tc) and 3.8W at 25°C (Ta). Operating temperature range is -55°C to 175°C (TJ). It is suitable for applications in industrial, automotive, and power management systems where efficient switching and robust performance are critical.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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