IRL520NSTRL
MOSFET N-CH 100V 10A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL520NSTRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 10A at 25°C (Tc). The low on-resistance, specified at a maximum of 180mOhm at 6A and 10V Vgs, minimizes conduction losses. With a Gate Charge (Qg) of 20nC at 5V Vgs, it enables fast switching speeds. The IRL520NSTRL offers a maximum power dissipation of 48W (Tc) and is packaged in a surface-mount D2PAK (TO-263-3) for robust thermal performance. Typical applications include power supplies, motor control, and automotive electronics. It supports a wide operating temperature range from -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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