IRL40T209ATMA1
MOSFET N-CH 40V 300A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies StrongIRFET™ IRL40T209ATMA1 is an N-Channel Power MOSFET designed for high-current, high-efficiency applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 300A at 25°C (Tc), with a maximum power dissipation of 500W (Tc). The low on-resistance of 0.72mOhm at 100A and 10V gate drive ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 269 nC at 4.5V and input capacitance (Ciss) of 16000 pF at 20V. The IRL40T209ATMA1 is housed in a PG-HSOF-8-1 (8-PowerSFN) surface mount package, suitable for demanding thermal management. This component is utilized in industries such as electric vehicle powertrains, industrial motor control, and high-power power supplies.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.72mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PG-HSOF-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 269 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 20 V |
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