IRL40S212
MOSFET N-CH 40V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies StrongIRFET™ N-Channel Power MOSFET, part number IRL40S212, offers a 40V drain-source voltage rating and a continuous drain current capability of 195A at 25°C (Tc). This surface-mount device features a low on-resistance of 1.9mOhm maximum at 100A and 10V Vgs, with a gate threshold voltage of 2.4V at 150µA. The IRL40S212 exhibits a maximum gate charge of 137 nC at 4.5V Vgs and input capacitance of 8320 pF at 25V Vds. With a maximum power dissipation of 231W (Tc) and an operating temperature range of -55°C to 175°C, this TO-263-3 (D2PAK) packaged MOSFET is suitable for high-power switching applications in industrial and automotive sectors.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8320 pF @ 25 V |
Request a Quote
Clients Also Buy
IRFH7085TRPBF
MOSFET N-CH 60V 100A PQFN
IRF200P223
MOSFET N-CH 200V 100A TO247AC
IRL40SC228
MOSFET N-CH 40V 557A D2PAK
