IRL40DM247XTMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™5 N-Channel Power MOSFET, part number IRL40DM247XTMA1, features a 40V drain-to-source voltage (Vdss) and a low on-resistance of 0.82mOhm at 50A and 10V Vgs. This device, in a DirectFET™ Isometric ME (MG-WDSON-8-904) surface mount package, offers a continuous drain current of 44A at 25°C ambient and 211A at 25°C case temperature. With a maximum power dissipation of 2.8W (ambient) and 63W (case), it is suitable for demanding applications. Typical gate charge is 165 nC at 10V Vgs, and input capacitance is 8400 pF at 20V Vds. The operating temperature range is -40°C to 150°C. This MOSFET is utilized in industrial and automotive sectors.
Additional Information
Series: OptiMOS™5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ME |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Ta), 211A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.82mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | MG-WDSON-8-904 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 20 V |
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