IRL40B215
MOSFET N-CH 40V 120A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel Power MOSFET, part number IRL40B215, offers a 40V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). This device features a low on-resistance of 2.7mOhm at 98A and 10V Vgs, with a typical gate charge of 84nC at 4.5V. The IRL40B215 boasts a maximum power dissipation of 143W (Tc) and is housed in a TO-220AB through-hole package. It is suitable for applications requiring high current handling and efficient switching, commonly found in industrial power supplies, motor control, and automotive systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 98A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5225 pF @ 25 V |
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