IRL40B212
MOSFET N-CH 40V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRL40B212, a robust N-Channel MOSFET from the StrongIRFET™ series. This component features a 40V Drain-Source Voltage (Vdss) and a high continuous Current rating of 195A (Tc). Engineered for demanding applications, it offers a low Rds(on) of 1.9mOhm at 100A and 10V, with a maximum power dissipation of 231W (Tc). The device operates with a gate drive voltage range of 4.5V to 10V and has a typical Gate Charge of 137nC at 4.5V. The IRL40B212 is housed in a standard TO-220AB package suitable for through-hole mounting and is specified for operation across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power control, automotive systems, and renewable energy applications where high current handling and efficient switching are paramount.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 150µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8320 pF @ 25 V |
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