IRL40B209
MOSFET N-CH 40V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel MOSFET, part number IRL40B209, offers robust performance with a 40V drain-source voltage and a continuous drain current capability of 195A at 25°C. This device features a low on-resistance of 1.25mOhm at 100A and 10V, coupled with a maximum power dissipation of 375W at 25°C. Designed for through-hole mounting in a TO-220AB package, it operates efficiently across a wide temperature range from -55°C to 175°C. Key electrical characteristics include a gate charge (Qg) of 270 nC at 4.5V and input capacitance (Ciss) of 15140 pF at 25V. This component is suitable for applications in industrial power control, automotive systems, and power supply designs.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15140 pF @ 25 V |
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