IRL3803VSPBF
MOSFET N-CH 30V 140A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series IRL3803VSPBF is an N-channel power MOSFET designed for high-current applications. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 140 A at 25°C (Tc). The low on-resistance (Rds On) of 5.5 mOhm at 71 A and 10 V gate drive, coupled with a maximum gate charge (Qg) of 76 nC at 4.5 V, ensures efficient switching performance. With a maximum power dissipation of 200 W (Tc), it is suitable for demanding thermal environments. The device operates across a wide temperature range from -55°C to 175°C (TJ) and is housed in a surface-mount D2PAK package (TO-263-3, D2PAK). This MOSFET is utilized in power supply units, motor control, and automotive applications where robust power handling is critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 71A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 25 V |
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