IRL3803VPBF
MOSFET N-CH 30V 140A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3803VPBF. This TO-220AB packaged device offers a 30V drain-source voltage and a continuous drain current of 140A at 25°C. Featuring a low on-resistance of 5.5mOhm at 71A and 10V, this MOSFET is designed for high current applications. Key electrical characteristics include an input capacitance (Ciss) of 3720pF at 25V and a gate charge (Qg) of 76nC at 4.5V. The device supports a gate-source voltage range of ±16V and a threshold voltage (Vgs(th)) of 1V at 250µA. With a maximum power dissipation of 200W and an operating temperature range of -55°C to 175°C, the IRL3803VPBF is suitable for demanding applications in industries such as industrial power supplies and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 71A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 25 V |
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