IRL3803STRRPBF
MOSFET N-CH 30V 140A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3803STRRPBF, is a robust surface-mount device designed for high-current applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 140A at 25°C (Tc). The low on-resistance of 6mOhm at 71A and 10V gate drive voltage, coupled with a gate charge of 140 nC at 4.5V, ensures efficient switching performance. With a maximum power dissipation of 200W at 25°C (Tc), this MOSFET is suitable for demanding power management tasks. The TO-263-3, D2PAK package facilitates efficient thermal management. This component is widely utilized in automotive, industrial power control, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 71A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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