IRL3803STRLPBF
MOSFET N-CH 30V 140A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3803STRLPBF, features a 30V drain-source breakdown voltage and a continuous drain current of 140A at 25°C (Tc). This surface-mount device, packaged in a TO-263-3, D2PAK, offers a low on-resistance of 6mOhm at 71A and 10V Vgs. Key parameters include a gate charge of 140nC at 4.5V Vgs and input capacitance of 5000pF at 25V Vds. Power dissipation is rated at 3.8W (Ta) and 200W (Tc). The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power control, and high-current switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 71A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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