IRL3803LPBF
MOSFET N-CH 30V 140A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRL3803LPBF. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 140A at 25°C (Tc). The ultra-low on-resistance of 6mOhm is achieved at 71A and 10V Vgs, with a gate drive requirement ranging from 4.5V to 10V. Key parameters include a gate charge (Qg) of 140 nC at 4.5V and input capacitance (Ciss) of 5000 pF at 25V. Maximum power dissipation is rated at 200W (Tc) and 3.8W (Ta). The component is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply designs, automotive applications, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 71A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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