IRL3716STRLPBF
MOSFET N-CH 20V 180A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET. This component, part number IRL3716STRLPBF, features a 20V drain-source breakdown voltage and a continuous drain current of 180A at 25°C (Tc). With a low on-resistance of 4mOhm maximum at 90A and 10V (Vgs), it offers efficient power handling up to 210W (Tc). The device utilizes MOSFET technology and is housed in a TO-263-3, D2PAK package for surface mounting, supplied on tape and reel. Key parameters include a gate charge of 79nC at 4.5V (Vgs) and input capacitance of 5090pF at 10V (Vds). Operating temperature range is -55°C to 175°C. This MOSFET is suitable for applications in industrial and automotive power control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5090 pF @ 10 V |