IRL3716S
MOSFET N-CH 20V 180A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3716S, offers a 20V drain-source voltage and a continuous drain current of 180A at 25°C (Tc). This device features a low on-resistance of 4mOhm at 90A and 10V Vgs, with a gate charge of 79nC at 4.5V. The IRL3716S has an input capacitance (Ciss) of 5090pF at 10V. It is designed for surface mounting in the TO-263-3, D2PAK package. With a maximum power dissipation of 210W (Tc), this MOSFET is suitable for applications requiring high current handling and efficient switching in industries such as automotive and industrial power control. The device operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5090 pF @ 10 V |
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