IRL3715ZSPBF
MOSFET N-CH 20V 50A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3715ZSPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 20V drain-source voltage rating and a continuous drain current capability of 50A at 25°C (Tc), with a maximum power dissipation of 45W (Tc). The low on-resistance of 11mOhm at 15A and 10V (Vgs) is achieved through advanced MOSFET technology, ensuring efficient power transfer. Gate drive specifications range from 4.5V to 10V, with a gate charge (Qg) of 11 nC at 4.5V (Vgs) and input capacitance (Ciss) of 870 pF at 10V (Vds). The IRL3715ZSPBF is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface-mount package, suitable for automated assembly. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in industries such as automotive, industrial power control, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V |
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