IRL3715ZS
MOSFET N-CH 20V 50A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3715ZS. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 50A at 25°C. With a low on-resistance (Rds On) of 11mOhm at 15A and 10V, it offers efficient power switching. The Gate Charge (Qg) is 11 nC maximum at 4.5V, and input capacitance (Ciss) is 870 pF maximum at 10V. Designed for surface mounting in the TO-263-3, D2PAK package, this MOSFET has a maximum power dissipation of 45W. It is suitable for applications requiring high current handling and low conduction losses, commonly found in power supply units and motor control systems. Operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V |
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