IRL3715STRRPBF
MOSFET N-CH 20V 54A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3715STRRPBF, offers a continuous drain current rating of 54A at 25°C (Tc) and a drain-to-source voltage (Vdss) of 20V. This surface mount device, packaged in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), features a low on-resistance of 14mOhm maximum at 26A, 10V. Gate drive voltages range from 4.5V to 10V, with a maximum gate charge of 17 nC at 4.5V. Input capacitance (Ciss) is 1060 pF maximum at 10V. The component operates within an extended temperature range of -55°C to 175°C (TJ). Power dissipation capabilities are 3.8W (Ta) and 71W (Tc). This MOSFET is suitable for applications in industrial and automotive sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V |
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