IRL3715STRLPBF
MOSFET N-CH 20V 54A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3715STRLPBF. This MOSFET features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 54A at 25°C (Tc). The device offers a low On-Resistance (Rds On) of 14mOhm at 26A and 10V, with a gate drive range from 4.5V to 10V. Key parameters include a gate charge (Qg) of 17nC at 4.5V and input capacitance (Ciss) of 1060pF at 10V. The IRL3715STRLPBF is housed in a TO-263-3, D2PAK surface mount package, designed for efficient thermal management with a maximum power dissipation of 71W (Tc). It operates across a wide temperature range of -55°C to 175°C. This component is commonly utilized in automotive and industrial power control applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V |