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IRL3715STRL

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IRL3715STRL

MOSFET N-CH 20V 54A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRL3715STRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 54A at 25°C (Tc). The low on-resistance of 14mOhm at 26A and 10V Vgs ensures minimal conduction losses. Key parameters include a gate charge of 17nC (max) at 4.5V Vgs and an input capacitance of 1060pF (max) at 10V Vds. With a maximum power dissipation of 71W (Tc) and an operating temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The D2PAK (TO-263-3) surface mount package facilitates integration into compact printed circuit board designs. This MOSFET is commonly utilized in automotive, industrial power control, and power supply applications.

Additional Information

Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 26A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1060 pF @ 10 V

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