IRL3715SPBF
MOSFET N-CH 20V 54A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3715SPBF is a N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) capability of 54A at 25°C (Tc). The low on-resistance of 14mOhm at 26A and 10V gate drive ensures minimal power loss during conduction. With a gate charge (Qg) of 17 nC at 4.5V and input capacitance (Ciss) of 1060 pF at 10V, it is optimized for fast switching frequencies. The MOSFET is housed in a TO-263-3, D2PAK surface mount package, providing robust thermal performance with a maximum power dissipation of 71W (Tc). Operating across a wide temperature range of -55°C to 175°C (TJ), this device is suitable for demanding applications in automotive, industrial power control, and high-power DC-DC converters.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V |
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