IRL3715S
MOSFET N-CH 20V 54A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3715S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 54A at 25°C (Tc). The low Rds On of 14mOhm is achieved at 26A and 10V Vgs, with a manageable gate charge of 17nC at 4.5V Vgs. The IRL3715S offers robust thermal performance with a maximum power dissipation of 71W at 25°C (Tc) and 3.8W at 25°C (Ta). Its TO-263-3, D2PAK (2 Leads + Tab) package facilitates efficient surface mounting. Key electrical parameters include an input capacitance (Ciss) of 1060pF at 10V Vds and a threshold voltage (Vgs(th)) of 3V at 250µA. This component is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V |
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