IRL3715PBF
MOSFET N-CH 20V 54A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3715PBF, offers a 20V drain-source voltage with a continuous drain current of 54A at 25°C. This through-hole device features a low Rds(on) of 14mOhm at 26A and 10V, with a gate threshold voltage of 3V at 250µA. Key electrical characteristics include a gate charge of 17 nC at 4.5V and an input capacitance of 1060 pF at 10V. The device is rated for a maximum power dissipation of 71W at 25°C (Tc) and operates across a wide temperature range of -55°C to 175°C. Packaged in a TO-220AB, this MOSFET is suitable for applications in power management and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V |
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