IRL3714ZS
MOSFET N-CH 20V 36A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3714ZS is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 36A at 25°C (Tc). The low on-resistance (Rds On) of 16mOhm is achieved at 15A and 10V Vgs, with a maximum gate-source voltage (Vgs) of ±20V. The device offers a gate charge (Qg) of 7.2 nC at 4.5V Vgs and an input capacitance (Ciss) of 550 pF at 10V Vds. With a maximum power dissipation of 35W (Tc), it is packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount configuration. This MOSFET is suitable for use in power management, automotive, and industrial control systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
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