IRL3714ZPBF
MOSFET N-CH 20V 36A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRL3714ZPBF. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 36A at 25°C (Tc). Designed for through-hole mounting in a TO-220AB package, it offers a maximum power dissipation of 35W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 16mOhm at 15A and 10V Vgs, and a gate charge (Qg) of 7.2 nC at 4.5V Vgs. Input capacitance (Ciss) is 550 pF maximum at 10V Vds. The operating temperature range is -55°C to 175°C (TJ). This component is frequently utilized in power conversion, automotive, and industrial control applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
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