IRL3714ZLPBF
MOSFET N-CH 20V 36A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3714ZLPBF. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 36A at 25°C (Tc). With a low On-Resistance (Rds On) of 16mOhm maximum at 15A and 10V Vgs, it offers efficient power handling. The component has a maximum power dissipation of 35W (Tc) and a gate charge of 7.2 nC at 4.5V Vgs. Input capacitance (Ciss) is rated at 550 pF maximum at 10V Vds. The IRL3714ZLPBF utilizes advanced MOSFET technology and is housed in a TO-262-3 Long Leads package for through-hole mounting. This component is suitable for applications in automotive and industrial power management systems. It operates across a temperature range of -55°C to 175°C (TJ) with a maximum gate-to-source voltage of ±20V.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
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