IRL3714ZL
MOSFET N-CH 20V 36A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRL3714ZL is a N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 36A at 25°C (Tc), with a maximum power dissipation of 35W (Tc). The Rds(on) is specified at a maximum of 16mOhm when driven at 15A and 10V Vgs. With a gate charge (Qg) of 7.2nC at 4.5V and input capacitance (Ciss) of 550pF at 10V, it offers efficient switching characteristics. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a TO-262-3 Long Leads package, also known as I2PAK or TO-262AA, suitable for through-hole mounting. This MOSFET is commonly utilized in automotive, industrial power control, and DC-DC conversion systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
