IRL3714Z
MOSFET N-CH 20V 36A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3714Z, is a 20V device with a continuous drain current capability of 36A at 25°C. This TO-220AB packaged component features a maximum power dissipation of 35W. The Rds(On) is specified at 16mOhm maximum when driven at 15A and 10V. Key parameters include a gate charge of 7.2 nC at 4.5V and input capacitance of 550 pF at 10V. The threshold voltage is 2.55V at 250µA, with a maximum gate-source voltage of ±20V. This MOSFET is suitable for applications requiring efficient switching and power control in automotive and industrial power supply systems. It is supplied in tube packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
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