IRL3714PBF
MOSFET N-CH 20V 36A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3714PBF, offers a 20V drain-source voltage and a continuous drain current of 36A at 25°C (Tc). This through-hole TO-220AB packaged device features a maximum on-resistance of 20mOhm at 18A and 10V Vgs, with a gate charge (Qg) of 9.7 nC at 4.5V. Static drain-source on-resistance is optimized with a 4.5V to 10V drive voltage range. The MOSFET's thermal performance is characterized by a 47W maximum power dissipation (Tc) and an operating temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
