IRL3714LPBF
MOSFET N-CH 20V 36A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3714LPBF. This TO-262 package MOSFET offers a 20V drain-source voltage (Vdss) and 36A continuous drain current (Id) at 25°C. Featuring a low Rds(on) of 20mOhm at 18A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 3V at 250µA. The device has a maximum gate charge (Qg) of 9.7 nC at 4.5V Vgs and an input capacitance (Ciss) of 670 pF at 10V Vds. With a maximum power dissipation of 47W at 25°C (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for power conversion and control applications within automotive and industrial sectors. The component is supplied in a TO-262-3 Long Leads package.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 10 V |
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