IRL3714L
MOSFET N-CH 20V 36A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3714L, features a 20V drain-source voltage and a continuous drain current of 36A at 25°C (Tc). This device offers a low on-resistance of 20mOhm maximum at 18A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 3V maximum at 250µA. The IRL3714L has a maximum power dissipation of 47W (Tc) and a gate charge (Qg) of 9.7 nC maximum at 4.5V. Input capacitance (Ciss) is 670 pF maximum at 10V Vds, with a Vgs(max) of ±20V. Packaged in a TO-262-3 long leads (I2PAK, TO-262AA) for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 175°C. It is suitable for applications in industrial and automotive sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 10 V |
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