IRL3713STRRPBF
MOSFET N-CH 30V 260A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3713STRRPBF, is designed for high-current switching applications. This surface mount device features a 30V drain-source breakdown voltage and a continuous drain current capability of 260A at 25°C (Tc), with a maximum power dissipation of 330W (Tc). The low on-resistance of 3mOhm at 38A and 10V (Vgs) makes it suitable for efficient power conversion. Key electrical parameters include a gate charge of 110 nC at 4.5V (Vgs) and an input capacitance of 5890 pF at 15V (Vds). The device operates across an extended temperature range of -55°C to 175°C (TJ). The IRL3713STRRPBF is supplied in a D2PAK (TO-263-3) package on tape and reel, commonly utilized in industrial power supplies, automotive applications, and high-power motor control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 15 V |
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