IRL3713STRLPBF
MOSFET N-CH 30V 260A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3713STRLPBF, offers a 30V drain-source breakdown voltage and a continuous drain current of 260A at 25°C (Tc). This device features a low on-resistance of 3mOhm (max) at 38A and 10V gate drive. Designed for demanding applications, it dissipates up to 330W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). The N-Channel MOSFET utilizes advanced MOSFET technology and is supplied in a surface-mount D2PAK (TO-263-3) package, delivered on tape and reel (TR). Key parameters include a maximum gate charge (Qg) of 110 nC at 4.5V and input capacitance (Ciss) of 5890 pF at 15V. This component is suitable for power management and switching applications in industries such as automotive and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 15 V |