IRL3713SPBF
MOSFET N-CH 30V 260A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3713SPBF is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 260A at 25°C, with a maximum power dissipation of 330W (Tc). The low on-resistance (Rds On) of 3mOhm at 38A and 10V gate drive simplifies design and enhances efficiency. Key electrical characteristics include a gate charge (Qg) of 110 nC at 4.5V and input capacitance (Ciss) of 5890 pF at 15V. The IRL3713SPBF utilizes a D2PAK (TO-263-3) surface mount package for efficient thermal management. This device is suitable for demanding applications in power supply, automotive, and industrial sectors. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 15 V |
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